Qualcomm has announced the next latest and greatest chipset i.e Snapdragon 835, this chipset will be powering next year’s flagship smartphones. Qualcomm is partnering with Samsung to manufacture the upcoming Snapdragon 835 mobile processor. It is supposedly based upon Samsung’s newest 10nm FinFET process, making it the smallest of its kind.
The current Snapdragon 820 and 821 Soc’s include Quick Charge 3.0 feature that can charge your smartphone up to 80 percent in 35 minutes. And now, the new Snapdragon 835 Soc brings Quick Charge 4.0 which claims to charge 20 percent faster and 30 percent higher efficiency than the older ones. It also supports USB-C and USB Power Delivery Standards.
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Alex Katouzian, senior vice president, product management, Qualcomm Technologies said;
As mobile devices become more capable and feature rich, people tend to use them more. That’s why consumer demand and awareness for fast-charging solutions is now at an all-time high. Quick Charge 4 addresses that need by providing up to 50 percent battery charge in roughly 15 minutes or less, so you don’t have to spend all day chained to your charging cable.
Quick Charge 4 includes third generation INOV (Intelligent Negotiation for Optimum Voltage) which basically provides real-time thermal management. Qualcomm is also introducing two new power management ICs, the SMB1380, and the SMB1381, which process lower impedance giving out 95 percent peak efficiency, and advanced fast charging features.
Samsung is also using the same process in making its own Exynos 8895 chipsets which could make its way on the Galaxy S8. The Snapdragon is expected to be in devices in the first half of 2017. A lot of upcoming phones like LG G6, HTC 10 successor and Samsung Galaxy S8 (maybe) is likely to be powered by Snapdragon 835 SoC.
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